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  unisonic technologies co.,ltd MGBR10L40 preliminary diode www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r601-202.a mos gated barrier rectifier ? description the utc MGBR10L40 is a surface mount mos gatedbarrier rectifier,it uses utc?s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc. ? features * low forward voltage drop * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 MGBR10L40l-t27-r MGBR10L40g-t27-r to-277 a k a tape reel note: pin assignment: a: anode k: common cathode MGBR10L40l-t27-r (1)packing type (2)package type (3)lead free (1) r: tape reel (2) t27: to-227 (3) l: lead free, g: halogen free ? marking information package marking to-277
MGBR10L40 preliminary diode unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r601-202.a ? absolute maximum ratings (t a =25c, unless otherwise specified) single phase, half wave, 60hz, resistive or inductive load. for capacitance load,derate current by 20%. parameter symbol ratings unit dc blocking voltage v rm 40 v workingpeak reverse voltage v rwm 40 v peak repetitive reverse voltage v rrm 40 v average rectified output current t c =140c i o 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load i fsm 150 a repetitive peak avalanche power (1 s, 25c) p arm 5000 w operating junction temperature t j -65~+150 c storage temperature t stg -65~+150 c note: absolute maximum ratings are those values beyond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics (note 3) parameter symbol ratings unit junction to ambient ja 73 c/w junction to case jc 13 c/w ? electrical characteristics (t a =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit reverse breakdown voltage (note 1) v ( br ) r i r =0.5ma 40 v forward voltage drop v fm i f =10a, t j =25c 0.57 v i f =10a, t j =125c 0.52 v leakage current (note 1) i rm v r =40v, t j =25c 80 300 a v r =40v, t j =125c 12 40 ma notes: 1. short duration pulse test used to minimize self-heating effect. 2. thermal resistance junction to case mounted on heatsink. 3. mounted on an fr4 pcb, single-sided copper, with 100 cm 2 copper pad area.
MGBR10L40 preliminary diode unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r601-202.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expec ted to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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